PART |
Description |
Maker |
2SC3649 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
2SB1302 SB1302 |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SA1580 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SA1434 |
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., L...
|
2SA1705 |
Bipolar Transistor Adoption of FBET process
|
ON Semiconductor
|
2SC4390 |
Adoption of MBIT process. High DC current gain (hFE=800 to 3200).
|
TY Semiconductor Co., Ltd
|
VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For Extended-Definition TV Projections
|
SANYO[Sanyo Semicon Device]
|
SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|